leshan radio company, ltd. general purpose transistors 1 3 2 l2sc4081qt1g series sc-70/sot? 323 maximum ratings rating symbol value unit collector?emitter voltage v ceo 50 v collector?base voltage v cbo 60 v emitter?base voltage v ebo 7.0 v collector current ? continuous i c 150 madc collector power dissipation p c 0.15 w junction temperature t j 150 c storage temperature t stg - 55 ~ +150 c 2 emitter 3 collector 1 base npn silicon feature ? low cob,cob=2pf(typ.). ? epitaxial planar type. ? pnp complement:l2sa1576a ? device marking and ordering information device marking shipping l2sc4081qt1g bq 3000/tape&reel l2sc4081qt 3 g bq 10000/tape&reel l2sc4081rt1g br 3000/tape&reel l2sc4081rt 3 g br 10000/tape&reel l2sc4081st1g bs 3000/tape&reel l2sc4081st 3 g bs 10000/tape&reel we declare that the material of product compliance with rohs requirements. rev.o 1/5
leshan radio company, ltd. electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit collector?emitter breakdown voltage v (br)ceo 50 ? ? v (i c = 1 ma) emitter?base breakdown voltage v (br)ebo 7??v (i e = 50 a) collector?base breakdown voltage v (br)cbo 60 ? ? v (i c = 50 a) collector cutoff current i cbo ? ? 0.1 a (v cb = 60 v) emitter cutoff current i ebo ? ? 0.1 a (v eb = 7 v) collector-emitter saturation voltage v ce(sat) ? ? 0.4 v (i c / i b = 50 ma / 5m a) dc current transfer ratio h fe 120 ?? 560 ?? (v ce = 6 v, i c = 1ma) transition frequency f t ? 180 ?? mhz (v ce = 12 v, i e = ? 2ma, f =30mhz ) output capacitance c ob ? 2.0 3.5 pf (v cb = 12 v, i e = 0a, f =1mhz ) l2sc4081qt1g series h fe values are classified as follows: qrs h fe 120~270 180~390 270~560 * rev.o 2/5
leshan radio company, ltd. 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 ?1.6 t a = 100c 25c ? 55c 50 20 10 50 2 1 0.5 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 t a = 25c 100 80 60 40 20 0 i c , collector current (ma) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics( ) fig.3 grounded emitter output characteristics( ) fig.4 dc current gain vs. collector current ( ) fig.5 dc current gain vs. collector current ( ) fig.6 collector-emitter saturation voltage vs. collector current v ce = 6 v v be , base to emitter voltage(v) i c , collector current (ma) v ce , collector to emitter voltage (v) 0 48121620 10 8 6 4 2 0 i c , collector current (ma) v ce , collector to emitter voltage (v) 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 200 500 200 100 50 20 10 h fe , dc current gain i c , collector current (ma) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.50ma 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 l2sc4081qt1g series rev.o 3/5
leshan radio company, ltd. fig.8 collector-emitter saturation voltage vs. collector current ( ) v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 fig.9 gain bandwidth product vs. emitter current 500 200 100 50 f r , transition frequency(mhz) i e , emitter current (ma) ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 fig.10 collector output capacitance vs.collector-base voltage emitter inputcapacitance vs. emitter-base voltage 20 10 5 2 1 c ob , collector output capacitance( pf) c ib , emitter input capacitance (pf) v cb , collector to base voltage (v) v eb , emitter to base voltage (v) 0.2 0.5 1 2 5 10 20 50 fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 fig.11 base-collector time constant vs.emitter current 200 100 50 20 10 c c - r bb , base collector time constant( ps) i e , emitter current (ma) ?0.2 ?0.5 ?1 ?2 ?5 ?10 l2sc4081qt1g series rev.o 4/5
leshan radio company, ltd. sc - 70 / sot - 323 l2sc4081qt1g series a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev.o 5/5
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